? semiconductor components industries, llc, 2001 march, 2001 rev. 0 1 publication order number: NTP45N06/d NTP45N06, ntb45n06 power mosfet 45 amps, 60 volts nchannel to220 and d 2 pak designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. features ? higher current rating ? lower r ds(on) ? lower v ds(on) ? lower capacitances ? lower total gate charge ? tighter v sd specification ? lower diode reverse recovery time ? lower reverse recovery stored charge typical applications ? power supplies ? converters ? power motor controls ? bridge circuits maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit draintosource voltage v dss 60 vdc draintogate voltage (r gs = 10 m w ) v dgr 60 vdc gatetosource voltage continuous nonrepetitive (t p 10 ms) v gs v gs 20 30 vdc drain current continuous @ t a = 25 c continuous @ t a = 100 c single pulse (t p 10 m s) i d i d i dm 45 30 150 adc apk total power dissipation @ t a = 25 c derate above 25 c total power dissipation @ t a = 25 c (note 1.) total power dissipation @ t a = 25 c (note 2.) p d 125 0.83 3.2 2.4 w w/ c w w operating and storage temperature range t j , t stg 55 to +175 c single pulse draintosource avalanche energy starting t j = 25 c (v dd = 50 vdc, v gs = 10 vdc, rg = 25 w , i l(pk) = 40 a, l = 0.3 mh, v ds = 60 vdc) e as 240 mj 1. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 2. when surface mounted to an fr4 board using the minimum recommended pad size, (cu area 0.412 in 2 ). NTP45N06 llyww ntb45n06 llyww 45 amperes 60 volts r ds(on) = 26 m w device package shipping ordering information NTP45N06 to220ab 50 units/rail to220ab case 221a style 5 1 2 3 4 http://onsemi.com nchannel d s g marking diagrams & pin assignments ntx45n06 = device code ll = location code y = year ww = work week 1 gate 3 source 4 drain 2 drain 1 gate 3 source 4 drain 2 drain 1 2 3 4 d 2 pak case 418b style 2 ntb45n06 d 2 pak 50 units/rail ntb45n06t4 d 2 pak 800/tape & reel
NTP45N06, ntb45n06 http://onsemi.com 2 maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit thermal resistance junctiontocase junctiontoambient (note 3.) junctiontoambient (note 4.) r q jc r q ja r q ja 1.2 46.8 63.2 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics draintosource breakdown voltage (note 5.) (v gs = 0 vdc, i d = 250 m adc) temperature coefficient (positive) v (br)dss 60 70 57 vdc mv/ c zero gate voltage drain current (v ds = 60 vdc, v gs = 0 vdc) (v ds = 60 vdc, v gs = 0 vdc, t j = 150 c) i dss 1.0 10 m adc gatebody leakage current (v gs = 20 vdc, v ds = 0 vdc) i gss 100 nadc on characteristics (note 5.) gate threshold voltage (note 5.) (v ds = v gs , i d = 250 m adc) threshold temperature coefficient (negative) v gs(th) 2.0 2.8 7.2 4.0 vdc mv/ c static draintosource onresistance (note 5.) (v gs = 10 vdc, i d = 22.5 adc) r ds(on) 21 26 mohm static draintosource onvoltage (note 5.) (v gs = 10 vdc, i d = 45 adc) (v gs = 10 vdc, i d = 22.5 adc, t j = 150 c) v ds(on) 0.93 0.93 1.4 vdc forward transconductance (note 5.) (v ds = 8.0 vdc, i d = 12 adc) g fs 16.6 mhos dynamic characteristics input capacitance (v 25 vd v 0 vd c iss 1224 1725 pf output capacitance (v ds = 25 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 345 485 transfer capacitance f = 1 . 0 mhz) c rss 76 160 switching characteristics (note 6.) turnon delay time t d(on) 10 25 ns rise time (v dd = 30 vdc, i d = 45 adc, t r 101 200 turnoff delay time (v dd 30 vdc , i d 45 adc , v gs = 10 vdc, r g = 9.1 w ) (note 5.) t d(off) 33 70 fall time t f 106 220 gate charge (v 48 vd i 45 ad q t 33 46 nc (v ds = 48 vdc, i d = 45 adc, v gs = 10 vdc ) ( note 5. ) q 1 6.4 v gs = 10 vdc) (note 5 . ) q 2 15 sourcedrain diode characteristics forward onvoltage (i s = 45 adc, v gs = 0 vdc) (note 5.) (i s = 45 adc, v gs = 0 vdc, t j = 150 c) v sd 1.08 0.93 1.2 vdc reverse recovery time (i 45 ad v 0 vd t rr 53.1 ns (i s = 45 adc, v gs = 0 vdc, di s /dt = 100 a/ m s ) ( note 5. ) t a 36 di s /dt = 100 a/ m s) (note 5 . ) t b 16.9 reverse recovery stored charge q rr 0.087 m c 3. when surface mounted to an fr4 board using 1 pad size, (cu area 1.127 in 2 ). 4. when surface mounted to an fr4 board using the minimum recommended pad size, (cu area 0.412 in 2 ). 5. pulse test: pulse width 300 m s, duty cycle 2%. 6. switching characteristics are independent of operating junction temperatures.
NTP45N06, ntb45n06 http://onsemi.com 3 70 60 50 90 40 30 20 10 0 80 0.032 0.03 0.028 0.026 0.024 0.022 0.02 0.018 v ds , draintosource voltage (volts) i d , drain current (amps) v gs , gatetosource voltage (volts) i d , drain current (amps) i d , drain current (amps) i d , drain current (amps) r ds(on) , draintosource resistance ( w ) r ds(on) , draintosource resistance ( w ) t j , junction temperature ( c) v ds , draintosource voltage (volts) r ds(on) , draintosource resistance (normalized) i dss , leakage (na) 2.2 1.8 1.4 1.6 1.2 1 0.6 100 10 1000 10000 0 70 3 60 2 1 50 figure 1. onregion characteristics figure 2. transfer characteristics 0 0.05 0.042 0.034 40 30 20 0.026 0.018 0.01 10 50 60 90 figure 3. onresistance vs. gatetosource voltage figure 4. onresistance vs. drain current and gate voltage figure 5. onresistance variation with temperature figure 6. draintosource leakage current vs. voltage 90 50 50 25 0 25 75 125 100 35 8 4.5 4 3.5 03040 20 10 50 60 40 30 20 10 0 6 70 0 40 30 20 10 50 60 90 70 175 150 0.8 80 4 5 5.5 6 6.5 7 7.5 v gs = 8 v v ds > = 10 v t j = 25 c t j = 55 c t j = 100 c t j = 25 c t j = 55 c t j = 100 c v gs = 10 v v gs = 10 v v gs = 0 v t j = 150 c t j = 100 c t j = 125 c i d = 22.5 a v gs = 10 v v gs = 10 v v gs = 7.5 v v gs = 7 v v gs = 6 v v gs = 5.5 v v gs = 5 v v gs = 4.5 v v gs = 6.5 v 80 80 v gs = 15 v 2 v gs = 9 v
NTP45N06, ntb45n06 http://onsemi.com 4 gatetosource or draintosource voltage (volts) c, capacitance (pf) q g , total gate charge (nc) v gs , gatetosource voltage (volts) r g , gate resistance ( w )v sd , sourcetodrain voltage (volts) i s , source current (amps) t, time (ns) v ds , draintosource voltage (volts) t j , starting junction temperature ( c) i d , drain current (amps) e as , single pulse draintosource avalanche energy (mj) 1000 100 10 1 0.1 1000 100 1 12 10 8 6 4 2 0 280 240 200 160 120 80 40 0 50 40 30 20 10 0 10 3600 3200 10 2800 2400 15 5 020 2000 1600 1200 800 0 5 figure 7. capacitance variation figure 8. gatetosource and draintosource voltage vs. total charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current figure 11. maximum rated forward biased safe operating area figure 12. maximum avalanche energy vs. starting junction temperature 25 0 16 20 12 824 4 1 10 100 0.6 0.76 0.8 0.72 0.68 0.92 0.64 1.04 0.10 10 100 1 25 125 150 100 75 175 50 400 0.84 0.88 0.96 10 28 32 36 1 i d = 45 t j = 25 c v gs v gs = 0 v v ds = 0 v t j = 25 c c rss c iss c oss c rss c iss v gs = 20 v single pulse t c = 25 c v ds = 30 v i d = 45 a v gs = 10 v v gs = 0 v t j = 25 c i d = 45 a t r t d(off) t d(on) t f r ds(on) limit q t q 2 q 1 10 ms 1 ms 100 m s dc v gs v ds thermal limit package limit
NTP45N06, ntb45n06 http://onsemi.com 5 1 0.1 0.01 0.00001 1 0.1 0.01 0.001 0.0001 10 r(t), effective transient thermal response (normalized) t, time (s) normalized to r q jc at steady state figure 13. thermal response 10 0.01 0.001 figure 14. thermal response t, time (s) r(t), effective transient thermal resistance (normalized) 0.00001 0.001 0.01 1 0.1 1000 100 10 1 0.1 0.0001 normalized to r q ja at steady state, 1 square cu pad, cu area 1.127 in 2 , 3 x 3 inch fr4 board
NTP45N06, ntb45n06 http://onsemi.com 6 package dimensions to220 threelead to220ab case 221a09 issue aa style 5: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. dimension z defines a zone where all body and lead irregularities are allowed. dim min max min max millimeters inches a 0.570 0.620 14.48 15.75 b 0.380 0.405 9.66 10.28 c 0.160 0.190 4.07 4.82 d 0.025 0.035 0.64 0.88 f 0.142 0.147 3.61 3.73 g 0.095 0.105 2.42 2.66 h 0.110 0.155 2.80 3.93 j 0.018 0.025 0.46 0.64 k 0.500 0.562 12.70 14.27 l 0.045 0.060 1.15 1.52 n 0.190 0.210 4.83 5.33 q 0.100 0.120 2.54 3.04 r 0.080 0.110 2.04 2.79 s 0.045 0.055 1.15 1.39 t 0.235 0.255 5.97 6.47 u 0.000 0.050 0.00 1.27 v 0.045 --- 1.15 --- z --- 0.080 --- 2.04 b q h z l v g n a k f 123 4 d seating plane t c s t u r j
NTP45N06, ntb45n06 http://onsemi.com 7 package dimensions d 2 pak case 418b03 issue d style 2: pin 1. gate 2. drain 3. source 4. drain notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. seating plane s g d t m 0.13 (0.005) t 23 1 4 3 pl k j h v e c a dim min max min max millimeters inches a 0.340 0.380 8.64 9.65 b 0.380 0.405 9.65 10.29 c 0.160 0.190 4.06 4.83 d 0.020 0.035 0.51 0.89 e 0.045 0.055 1.14 1.40 g 0.100 bsc 2.54 bsc h 0.080 0.110 2.03 2.79 j 0.018 0.025 0.46 0.64 k 0.090 0.110 2.29 2.79 s 0.575 0.625 14.60 15.88 v 0.045 0.055 1.14 1.40 b m b
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